IndiumV3, Russie, Analysis, bibRecord, 000071

New method of creation of a rearrangeable local Coulomb potential profile and its application for investigations of local conductivity of InAs nanowires

Identifieur interne : 000071 ( Russie/Analysis ); précédent : 000070; suivant : 000072

New method of creation of a rearrangeable local Coulomb potential profile and its application for investigations of local conductivity of InAs nanowires

Auteurs : RBID : Pascal:12-0139278

Descripteurs français

Pascal (Inist)
- Potentiel Coulomb, Conductivité électrique, Arséniure d'indium, Semiconducteur III-V, Composé III-V, Nanofil, Nanomatériau, Accumulation charge, Sonde Kelvin, Fil quantique, Barrière potentiel, Interface, 7363, 8107V.

English descriptors

KwdEn :
- Charge accumulation, Coulomb potential, Electrical conductivity, III-V compound, III-V semiconductors, Indium arsenides, Interfaces, Kelvin probe, Nanostructured materials, Nanowires, Potential barrier, Quantum wires.

Abstract

We present a new technique to create a reconfigurable Coulomb potential profile. The potential profile on the sample surface covered with residual polymethyl methacrylate (PMMA) layer as charge accumulation substance is performed with a low DC voltage applied to conductive probe tip of scanning microscope. To characterize the resulted Coulomb potential profile Kelvin probe technique is used. The effectiveness of this method is demonstrated by performing measurements of the local conductivity of InAs quantum wires. These investigations revealed an inhomogeneous conductivity of the wires and the formation of a potential barrier in the wire at the contact pad interface when the electronic system of the wire is depleted.

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to stream Main, to step Corpus: 002015
to stream Main, to step Repository: 002928
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Pascal:12-0139278

Le document en format XML

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<front><div type="abstract" xml:lang="en">We present a new technique to create a reconfigurable Coulomb potential profile. The potential profile on the sample surface covered with residual polymethyl methacrylate (PMMA) layer as charge accumulation substance is performed with a low DC voltage applied to conductive probe tip of scanning microscope. To characterize the resulted Coulomb potential profile Kelvin probe technique is used. The effectiveness of this method is demonstrated by performing measurements of the local conductivity of InAs quantum wires. These investigations revealed an inhomogeneous conductivity of the wires and the formation of a potential barrier in the wire at the contact pad interface when the electronic system of the wire is depleted.</div>
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New method of creation of a rearrangeable local Coulomb potential profile and its application for investigations of local conductivity of InAs nanowires

New method of creation of a rearrangeable local Coulomb potential profile and its application for investigations of local conductivity of InAs nanowires

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri